| -Solutions for High Efficiency, Cost Effective Silicon Solar Cells |
| The development of silicon solar cells with efficiencies above 20% is a key issue in the Photovoltaic Roadmap. The Roadmap called for 20% efficient silicon solar cells modules by the end of 2004. This means that the process technology and silicon material for achievement of high efficiencies must be reviewed. The most viable solution to the problem of attaining a stable, high efficiency and low cost cell is to use monocrystalling silicon material with a high minority carrier lifetime in the bulk and low amounts of performance degrading impurities. |
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PV-FZ™ silicon material will form the basis for the next generation of silicon solar cell modules supporting the ongoing development of stable, high efficiency and cost effective silicon solar cells. PV-FZ™ has been developed to meet both the material requirement and the cost levels.
Some of the features of PV-FZ™ Silicon are: |
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High Minority Carrier Lifetime |
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Low Levels of Performance Degrading Impurities |
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Tight Resistivity Tolerances |
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Cost Competitive to CZ for the PV Industry |
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Float Zone silicon has generated the highest efficiencies ever measured for silicon solar cells PV-FZ™ silicon has these superior material properties and will be used to set new standards in terms of efficiency and stability of silicon solar cell modules.
Topsil offers Float Zone ingot and wafer substrates with the listed parameters. Other parameters than those in the table are possible on request. |
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| Topsil: PV-FZ™ - Float Zone Silicon Shaped for the PV Industry Download Brochure |
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| Growth Method: |
PV-FZ™ Float Zone |
| Minority Carrier Lifetime: |
100 microseconds - 6000 microseconds depending upon bulk resistivity |
| Bulk Resistivity: |
0.5 ohm-cm - 30 ohm-cm |
| Resistivity Tolerance: |
± 20% |
| Ingot Diameter: |
125mm - 150mm |
| Crystal Orientation: |
<1-0-0> |
| Type and Dopant: |
N (Phosphorous), P (Boron) |
| Oxygen and Carbon Concentration: |
<106 cm-3 |
| Wafer Geometry: |
Semi-Square, Round |
| Wafer Thickness: |
225 micrometer - 300 micrometer |
| Wafer Surface Finish: |
Wire Cut |
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