| -Wafer Solutions for Leading-Edge Technology Development |
| EMS components are being widely used in a variety of systems ranging from low volume sensor elements in harsh industrial environments to high volume consumer goods. MEMS is forecasted to impact almost every product category bringing together silicon based microelectronics and micromachining technology in the same package or on the same chip. MEMS components require superior mechanical properties of the base silicon material and this is where Topsil has more than 40 years of experience growing silicon crystals. |
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Topsil has specialized in growing Float Zone crystals with superior control of dopant content and distribution and with very low levels of contaminants. This is especially beneficial for applications requiring very low levels of concentrations for oxygen such as powerMEMS components, high efficiency microstructured solar cells and photodiodes as well as MEMS devices on high resistivity silicon.
To complete Topsil range of products within MEMS, Topsil is also offering Czochralski (CZ) wafers.
Topsil offers Float Zone and CZ MEMS wafer substrates with the listed parameters. Other parameters that those in the table are possible on request. |
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| Topsil offers Float Zone ingot and wafer substrates with the listed typical parameters. Other product parameters than those in the table are possible on request. |
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| Topsil: FZ and CZ MEMS Wafer Substrates Parameters Download Brochure |
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| Growth Method: |
Czochralski (CZ) |
Czochralski (CZ) |
| Diameter: |
50mm - 150mm |
50mm - 150mm |
| Crystal Orientation: |
<1-0-0>, <1-1-1> |
<1-0-0>, <1-1-1> |
| Orientation Accuracy: |
< 0.5° |
< 0.5° |
| Type: |
N and P type |
undoped, N and P type |
| Dopant: |
Phosphorous, Boron |
1 - 100 |
| Bulk Resistivity: |
1 - 100 |
1 - 30000 |
| Oxygen Concentration: |
< 18 ppma |
< 0.02 ppma |
| Bulk Lifetime: |
> 20 microseconds |
> 1000 microseconds |
| Wafer Thickness: |
200 - 1300 microns |
200 - 1300 microns |
| Wafer Thickness Tolerance: |
5 microns |
5 microns |
| TTV: |
< 2.5 microns |
< 2.5 microns |
| TIR: |
< 1 microns |
< 1 microns |
| Wafer Surface Finish: |
Single Sided and Double Side Polished |
Single Sided and Double Side Polished |
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