Premium Float Zone Silicon: Laser Cut Downs

Premium Float Zone Silicon

Premium Float Zone Silicon Silicon

-Material Solutions with a Highly Proven Standard

Premium Float Zone (PFZ) silicon has the lowest resistivity variation of any in-situ doped silicon crystalline product on the market. This is of paramount importance for high and medium power semiconductor devices working under high loads and in extreme environments. The low resistivity variation guarantees safe and predictable operating limits for these critical components.

Some of the features of PFZ silicon are:

	Tight Resistivity Tolerances
	Low Levels of performance degrading impurities
	High Minority Carrier Lifetime

Topsil offers Float Zone ingot and wafer substrates with the listed typical parameters. Other product parameters than those in the table are possible on request.

Topsil: Premium Float Zone Silicon for Demanding Power Applications Download Brochure

Growth Method:

In-Situ Gas Phase Doped Float Zone Silicon

Ingot Diameter:

100mm - 150mm

Crystal Orientation:

<1-0-0>, <1-1-1>

Wafer Thickness:

> 200 microus depending on wafer diameter

Wafer Surface Finish:

As-cut, Lapped, Etched, Grinded, Polished

Type (Dopant):

N (Phosphorous), P (Boron)

Bulk Resistivity Range:

0.5 ohm-cm - 5,000 ohm-cm

Resistivity Tolerance:

± 8% - ± 20%

± 6% - ± 20%

Radial Resistivity Variation (ASTM F81 planC):

< 8% - 20%

< 6% - 20%

Striations:

± 10% - ± 20%

± 7% - ± 10%

Minority Carrier Lifetime:

> 500 microseconds

> 100 microseconds