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Premium Float Zone Silicon
Premium Float Zone Silicon  Silicon
     
 
-Material Solutions with a Highly Proven Standard
Premium Float Zone (PFZ) silicon has the lowest resistivity variation of any in-situ doped silicon crystalline product on the market. This is of paramount importance for high and medium power semiconductor devices working under high loads and in extreme environments. The low resistivity variation guarantees safe and predictable operating limits for these critical components.
   
Some of the features of PFZ silicon are:
 
b Tight Resistivity Tolerances
b Low Levels of performance degrading impurities
b High Minority Carrier Lifetime
 
Topsil offers Float Zone ingot and wafer substrates with the listed typical parameters. Other product parameters than those in the table are possible on request.
 
Topsil: Premium Float Zone Silicon for Demanding Power Applications    Download Brochure
 
Growth Method: In-Situ Gas Phase Doped Float Zone Silicon
Ingot Diameter: 100mm - 150mm
Crystal Orientation: <1-0-0>, <1-1-1>
Wafer Thickness: > 200 microus depending on wafer diameter
Wafer Surface Finish: As-cut, Lapped, Etched, Grinded, Polished
Type (Dopant): N (Phosphorous), P (Boron)
Bulk Resistivity Range: 0.5 ohm-cm - 5,000 ohm-cm
Resistivity Tolerance:
± 8% - ± 20%
± 6% - ± 20%
Radial Resistivity Variation (ASTM F81 planC):
< 8% - 20%
< 6% - 20%
Striations:
± 10% - ± 20%
± 7% - ± 10%
Minority Carrier Lifetime:
> 500 microseconds
> 100 microseconds
   
 
 
 
 
 
       
 
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