| Growth Method: |
In-Situ Gas Phase Doped Float Zone Silicon |
| Bulk Resistivity Range: |
100mm - 150mm |
| Resistivity Tolerance: |
<1-0-0>, <1-1-1> |
| Radial Resistivity Variation (ASTM F81 planC): |
> 200 microus depending on wafer diameter |
| Striations: |
As-cut, Lapped, Etched, Grinded, Polished |
| Minority Carrier Lifetime: |
N (Phosphorous), P (Boron) |
| Ingot Diameter: |
0.5 ohm-cm - 5,000 ohm-cm |
| Crystal Orientation: |
| ± 8% - ± 20% |
| ± 6% - ± 20% |
|
| Type and Dopant: |
|
| Oxygen and Carbon Concentration: |
| ± 10% - ± 20% |
| ± 7% - ± 10% |
|
| Wafer Thickness: |
| > 500 microseconds |
| > 100 microseconds |
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