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Neutron Transmutation Doped Silicon |
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Neutron Transmutation
Doped Silicon |
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| -Material Solutions with a High Proven Standard |
Neutron Transmutation Doped (NTD) silicon has the lowest resistivity variation of any crystalline silicon product on the market. This is of paramount importance for high power semiconductor devices working under extreme load. The record low resistivity variations guarantee safe and predictable operating limits for these critical components.
Thyristors, Diodes and Solid State Transistors all rely on uniformity of the base material over large areas. Topsil is supporting customers with NTD products in the widest range of resistivities ranging from 5 ohm-cm to 4000 ohm-cm. Key parameters for Topsil NTD products include: |
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The Tightest Resistivity Tolerances of any Silicon Crystalline Product |
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Low Levels of Performance Degrading Impurities |
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High Minority Carrier Lifetime |
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| Topsil offers Float Zone ingot and wafer substrates with the listed typical parameters. Other product parameters than those in the table are possible on request. |
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| Topsil: Neutron Transmutation Doped (NTD) Silicon Download Brochure |
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| Growth Method: |
Neutron Transmutation Doped Float Zone Silicon |
| Bulk Resistivity Range: |
5 ohm-cm - 4000 ohm-cm |
| Resistivity Tolerance: |
± 5% - ± 10% |
| Radial Resistivity Variation (ASTM F81 planC): |
< 3% - < 8% |
| Striations: |
Not Detectable |
| Minority Carrier Lifetime: |
> 300 microseconds depending upon bulk resistivity |
| Ingot Diameter: |
50mm - 154mm |
| Crystal Orientation: |
<1-0-0>, <1-1-1> |
| Type and Dopant: |
N (Phosphorous) |
| Oxygen and Carbon Concentration: |
<106 cm-3 |
| Wafer Thickness: |
> 200 microns depending upon wafer diameter |
| Wafer Surface Finish: |
As-cut, Lapped, Etched, Grinded, Polished |
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