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High Purity Silicon
High Purity Silicon
     
 
Material Solutions for High Quality Signal Detection
Detectors are becoming increasingly important in many high-end applications such as industrial surveillance, health monitoring, optical communications and precision guidance systems. In addition, high volume applications have run with detector for many years in products that are targeted to consumer industry. One important measure of all detectors is the noise level of the individual detectors. For most high-end applications it is critical to have noise levels at a few e- to be able to detect low levels of incoming signals, while for other applications the noise level can be significantly higher.
   
HPS Float Zone silicon for detector purposes has the following unique properties:
 
b Highest Resistivity Range in the market
b High Minority Carrier Lifetime
b Low Levels of performance degrading impurities
 
Topsil offers Float Zone ingot and wafer substrates with the listed typical parameters. Other product parameters than those in the table are possible on request.
 
Topsil: High Purity Silicon for Detector Applications Download Brochure
 
Growth Method: High Purity Float Zone Silicon
Bulk Resistivity Range: 800 ohm-cm - 30,000 ohm-cm
Resistivity Tolerance: ± 50%
Minority Carrier Lifetime: > 500 microseconds depending on bulk resistivity and carrier type
Ingot Diameter: 50mm - 154mm
Crystal Orientation: <1-0-0>, <1-1-1>
Type and Dopant: N (Phosphorous), P (Boron)
Oxygen and Carbon Concentration: <1016   cm-3
Wafer Thickness: > 200 microns depending upon on wafer diameter
Wafer Surface Finish: As-cut, lapped, etched, and polished
   
 
 
 
 
 
       
 
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