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Dry oxidation from 100 Å to 3000 Å (typically) |
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Wet oxidation from 3000 Å up to 30 µm |
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Tolerance ± 5% for run, ±2% within-wafer |
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Standard SEMI spec silicon wafers or special geometries |
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Slow ramp rates for specialty applications |
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Specialty oxides for telecommunication applications (typical thickness 5µm, 10µm, 15µm) |
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Special Order Oxide Applications with controlled dielectric strength |
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Quick turnaround on oxide services |
